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19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon
Article first published online: 21 JUL 2011
DOI: 10.1002/pip.1129
Copyright © 2011 John Wiley & Sons, Ltd.
Issue
Progress in Photovoltaics: Research and Applications
Volume 20, Issue 1, pages 1–5, January 2012
Additional Information
How to Cite
Petermann, J. H., Zielke, D., Schmidt, J., Haase, F., Rojas, E. G. and Brendel, R. (2012), 19%-efficient and 43 µm-thick crystalline Si solar cell from layer transfer using porous silicon. Prog. Photovolt: Res. Appl., 20: 1–5. doi: 10.1002/pip.1129
Publication History
- Issue published online: 29 DEC 2011
- Article first published online: 21 JUL 2011
- Manuscript Revised: 14 MAR 2011
- Manuscript Received: 17 FEB 2011
- Abstract
- Article
- References
- Cited By
Keywords:
- thin film;
- porous silicon;
- layer transfer;
- crystalline Si;
- free standing;
- kerf-free
ABSTRACT
We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm−2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%. Copyright © 2011 John Wiley & Sons, Ltd.