Narrow-bandgap CuIn3Te5 thin-film solar cells

Authors

  • Takahiro Mise,

    Corresponding author
    • Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, Japan
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  • Tokio Nakada

    1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, Japan
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Correspondence: Takahiro Mise, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, 252-5258, Japan.

Email: mise@ee.aoyama.ac.jp

ABSTRACT

We propose CuIn3Te5 as a ternary semiconductor material for narrow-bandgap thin-film solar cells. Well-developed CuIn3Te5 grains were obtained at a substrate temperature of 250 °C by single-step co-evaporation. The best solar cell that was fabricated using 4·0-µm-thick CuIn3Te5 layers grown at 250 °C yielded a total area efficiency of 6·92% (Voc = 407 mV, Jsc = 33·1 mA/cm2, and FF = 0·514). To clarify the loss in the device performance, the cell was compared with a standard CuInSe2 reference cell. A band diagram of the CdS/CuIn3Te5 solar cell was also presented. Copyright © 2011 John Wiley & Sons, Ltd.

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