Paper Presented at 26th EU PVSEC, Hamburg, Germany 2011
Polarisation analysis of luminescence for the characterisation of defects in silicon wafer solar cells
Article first published online: 2 NOV 2011
Copyright © 2011 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Special Issue: 26th EU PVSEC, Hamburg, Germany 2011
Volume 20, Issue 6, pages 661–669, September 2012
How to Cite
Peloso, M. P., Lew, J. S., Chaturvedi, P., Hoex, B. and Aberle, A. G. (2012), Polarisation analysis of luminescence for the characterisation of defects in silicon wafer solar cells. Prog. Photovolt: Res. Appl., 20: 661–669. doi: 10.1002/pip.1201
- Issue published online: 24 AUG 2012
- Article first published online: 2 NOV 2011
- Manuscript Accepted: 26 AUG 2011
- Manuscript Revised: 14 AUG 2011
- Manuscript Received: 29 MAY 2011
- solar cell;
Photoluminescence and electroluminescence imaging has progressed significantly in recent years and is now routinely used to extract spatially resolved characteristics of silicon wafer solar cells and other electronic devices. In this paper, we report on the expansion of the luminescence imaging technique by the application of spatially resolved polarisation analysis. Luminescence imaging of silicon wafer solar cells is extended to yield the partial polarisation of luminescence. It is hypothesised, and then shown experimentally, that certain defects in silicon wafer solar cells generate strongly polarised electroluminescence. In particular, extended crystalline defects in silicon wafers are shown to exhibit a partial polarisation of electroluminescence as high as 60%. The linear polarisation is found to be oriented to the dislocations in the multicrystalline silicon wafer solar cells. The luminescence polarisation effect is discussed in relation to internal charge anisotropy of defects in silicon wafer solar cells. These results may be used to advance the characterisation of solar cells, to understand the electrical properties of defects in silicon wafer solar cells, to study the formation of defects during crystal growth, or to probe the Bloch band anisotropy at regions of a high dislocation density. Copyright © 2011 John Wiley & Sons, Ltd.