Effect of Se flux on CuIn1-xGaxSe2 film in reactive sputtering process

Authors

Errata

This article is corrected by:

  1. Errata: Erratum to ‘Effect of Se flux on CuIn1−xGaxSe2 film in reactive sputtering process’, Prog. Photovolt: Res. Appl. 2012; 20: 899–903 Volume 21, Issue 1, 140, Article first published online: 22 December 2012

Nae-Man Park, Convergence Components & Materials Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305–700, Korea.

E-mail: nmpark@etri.re.krs

ABSTRACT

CuIn1-xGaxSe2 (CIGS) thin films were grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker was used to deliver reactive Se molecules. The Cu0·6 Ga0·4 and Cu0·4In0·6 targets were simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on CIGS film deposition were investigated. The CIGS film growth rate decreased, and the surface roughness of a film increased as the Se flux increased. The [112] crystal orientation was dominant, and metallic crystal phases such as Cu9Ga4 and Cu16In9 in a film were disappearing with increasing Se flux. A solar cell fabricated using a 900-nm CIGS film showed the power conversion efficiency of 8·6%, the highest value found in a sub-micron thick CIGS solar cell related to a reactive sputtering process with metallic targets. Copyright © 2011 John Wiley & Sons, Ltd.

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