Intermediate band photovoltaics based on interband–intraband transitions using In0.53Ga0.47As/InP superlattice
Article first published online: 25 NOV 2011
Copyright © 2011 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 21, Issue 4, pages 472–480, June 2013
How to Cite
Hu, W., Harada, Y., Hasegawa, A., Inoue, T., Kojima, O. and Kita, T. (2013), Intermediate band photovoltaics based on interband–intraband transitions using In0.53Ga0.47As/InP superlattice. Prog. Photovolt: Res. Appl., 21: 472–480. doi: 10.1002/pip.1208
- Issue published online: 23 MAY 2013
- Article first published online: 25 NOV 2011
- Manuscript Accepted: 26 AUG 2011
- Manuscript Revised: 20 JUL 2011
- Manuscript Received: 4 MAY 2011
- Incorporated Administrative Agency New Energy and Industrial Technology Development Organization (NEDO)
- Ministry of Economy, Trade and Industry (METI)
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