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Paper presented at 26th EU PVSEC, Hamburg, Germany 2011
Improvement of the open circuit voltage by modifying the transparent indium–tin oxide front electrode in amorphous n–i–p solar cells
Article first published online: 10 NOV 2011
DOI: 10.1002/pip.1220
Copyright © 2011 John Wiley & Sons, Ltd.
Issue
Progress in Photovoltaics: Research and Applications
Early View (Online Version of Record published before inclusion in an issue)
Additional Information
How to Cite
Haug, F.-J., Biron, R., Kratzer, G., Leresche, F., Besuchet, J., Ballif, C., Dissel, M., Kretschmer, S., Soppe, W., Lippens, P. and Leitner, K. (2011), Improvement of the open circuit voltage by modifying the transparent indium–tin oxide front electrode in amorphous n–i–p solar cells. Prog. Photovolt: Res. Appl.. doi: 10.1002/pip.1220
Publication History
- Article first published online: 10 NOV 2011
- Manuscript Accepted: 5 SEP 2011
- Manuscript Revised: 12 JUL 2011
- Manuscript Received: 13 MAY 2011
Funded by
- European Union within the FP7 project Silicon-Light. Grant Number: 241277
- Abstract
- Article
- References
- Cited By
Keywords:
- amorphous silicon;
- solar cells;
- work function
ABSTRACT
At the front contact of thin film silicon solar cells, the junction between the p-doped window layer and the n-type transparent electrode results in a barrier that must be surmounted by the charge carriers. The barrier height is governed by the work-function difference of these two materials. For different compositions of the well known In2O3–SnO2 (ITO) system, we find that higher oxygen partial pressure during sputter deposition increases the work function of the deposited films. Over the same range of oxygen partial pressures, ITO electrodes with low tin content applied to n–i–p type thin film silicon solar yield a gain in VOC by up to 40 mV. Copyright © 2011 John Wiley & Sons, Ltd.