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Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

Authors


Anis Jouini, CEA/LITEN, INES Savoie-Technolac, 50 avenue du Lac Léman, BP 332, 73377 Le Bourget-du-Lac, France.

E-mail: anis.jouini@cea.fr

ABSTRACT

Work on silicon crystal quality improvement and defect control has been carried out on lab-scale seeded growth ingots allowing wafers with controlled grain orientations. Both <111> and <100> monocrystalline-like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in-house, in a directional solidification system. Two mono-like wafer morphology types have been produced. Their structural and electrical properties are presented in detail. Copyright © 2011 John Wiley & Sons, Ltd.

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