Absorption coefficient for the intraband transitions in quantum dot materials
Article first published online: 31 JAN 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 21, Issue 4, pages 658–667, June 2013
How to Cite
Luque, A., Martí, A., Mellor, A., Fuertes Marrón, D., Tobías, I. and Antolín, E. (2013), Absorption coefficient for the intraband transitions in quantum dot materials. Prog. Photovolt: Res. Appl., 21: 658–667. doi: 10.1002/pip.1250
- Issue published online: 23 MAY 2013
- Article first published online: 31 JAN 2012
- Manuscript Accepted: 22 NOV 2011
- Manuscript Revised: 16 NOV 2011
- Manuscript Received: 6 APR 2011
- intermediate band solar cell;
- quantum dot;
- quantum calculations
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd.