SEARCH

SEARCH BY CITATION

Cited in:

CrossRef

This article has been cited by:

  1. 1
    Heiko Steinkemper, Michael Rauer, Pietro Altermatt, Friedemann D. Heinz, Christian Schmiga, Martin Hermle, Adapted parameterization of incomplete ionization in aluminum-doped silicon and impact on numerical device simulation, Journal of Applied Physics, 2015, 117, 7, 074504

    CrossRef

  2. 2
    Helmut Mäckel, Gabriel Micard, Kenneth Varner, Analytical models for the series resistance of selective emitters in silicon solar cells including the effect of busbars, Progress in Photovoltaics: Research and Applications, 2015, 23, 2
  3. 3
    Yifeng Chen, Hui Shen, Pietro P. Altermatt, Analysis of recombination losses in screen-printed aluminum-alloyed back surface fields of silicon solar cells by numerical device simulation, Solar Energy Materials and Solar Cells, 2014, 120, 356

    CrossRef

  4. 4
    Byungsul Min, Hannes Wagner, Amir Dastgheib-Shirazi, Achim Kimmerle, Heinrich Kurz, Pietro P. Altermatt, Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation, physica status solidi (RRL) - Rapid Research Letters, 2014, 8, 8
  5. 5
    Andrew Thomson, Nicholas Grant, Kean Fong Chern, Teng Kho, Improved Diffused-region Recombination-current Pre-factor Analysis, Energy Procedia, 2014, 55, 141

    CrossRef

  6. 6
    Keith R. McIntosh, Lachlan E. Black, On effective surface recombination parameters, Journal of Applied Physics, 2014, 116, 1, 014503

    CrossRef

  7. 7
    M. Padilla, H. Höffler, C. Reichel, H. Chu, J. Greulich, S. Rein, W. Warta, M. Hermle, M.C. Schubert, Surface recombination parameters of interdigitated-back-contact silicon solar cells obtained by modeling luminescence images, Solar Energy Materials and Solar Cells, 2014, 120, 363

    CrossRef

  8. 8
    Baochen Liao, Rolf Stangl, Fajun Ma, Ziv Hameiri, Thomas Mueller, Dongzhi Chi, Armin G. Aberle, Charanjit S. Bhatia, Bram Hoex, Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3, Journal of Applied Physics, 2013, 114, 9, 094505

    CrossRef

  9. 9
    Fa-Jun Ma, Shubham Duttagupta, Marius Peters, Ganesh S. Samudra, Armin G. Aberle, Bram Hoex, Numerical Analysis of p+ Emitters Passivated by a PECVD AlOx/SiNx Stack, Energy Procedia, 2013, 38, 124

    CrossRef

  10. 10
    Fa-Jun Ma, Shubham Duttagupta, Marius Peters, Ganesh S. Samudra, Armin G. Aberle, Bram Hoex, Numerical Modelling of Silicon p+ Emitters Passivated by a PECVD AlOx/SiNx Stack, Energy Procedia, 2013, 33, 104

    CrossRef

  11. 11
    M. Müller, P.P. Altermatt, K. Schlegel, G. Fischer, Evaluating The Quality of Selective Emitter Structures by Imaging the Emitter Saturation Current Density, Energy Procedia, 2012, 27, 293

    CrossRef