Photovoltaic application of O-doped Wittichenite-Cu 3 BiS 3: from microscopic properties to maximum efficiencies

Authors


Correspondence: C. Tablero, Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040, Spain.

E-mail: ctablero@etsit.upm.es

ABSTRACT

The electronic properties and the low environmental impact of Cu 3 BiS 3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu 3 BiS 3 have been obtained using two different exchange–correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd.

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