Calculation of quantitative shunt values using photoluminescence imaging
Article first published online: 27 MAR 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 21, Issue 5, pages 933–941, August 2013
How to Cite
Augarten, Y., Trupke, T., Lenio, M., Bauer, J., Weber, J. W., Juhl, M., Kasemann, M. and Breitenstein, O. (2013), Calculation of quantitative shunt values using photoluminescence imaging. Prog. Photovolt: Res. Appl., 21: 933–941. doi: 10.1002/pip.2180
- Issue published online: 20 JUL 2013
- Article first published online: 27 MAR 2012
- Manuscript Accepted: 25 JAN 2012
- Manuscript Received: 28 FEB 2010
- Manuscript Revised: 31 JAN 2010
- silicon solar cells;
- photoluminescence imaging;
- shunt current
A proof of concept study for a method of determining quantitative shunt values in silicon solar cells from photoluminescence images is presented. The method is based on interpretation of the luminescence intensity around a local shunt or recombination-active defect in terms of the extracted current. The theoretical relationship between the photoluminescence signal and the shunt current is derived. Experimental results on specifically prepared test structures show good agreement with known shunt resistance values. Experimental data on diffused wafers are presented. The effect of the front metallisation in complete cells on the appearance and interpretation of shunts in photoluminescence images is investigated experimentally. The limitations of the method are discussed. Copyright © 2012 John Wiley & Sons, Ltd.