Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells
Article first published online: 10 JUL 2012
Copyright © 2012 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 22, Issue 1, pages 10–17, January 2014
How to Cite
Scragg, J. J., Ericson, T., Fontané, X., Izquierdo-Roca, V., Pérez-Rodríguez, A., Kubart, T., Edoff, M. and Platzer-Björkman, C. (2014), Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells. Prog. Photovolt: Res. Appl., 22: 10–17. doi: 10.1002/pip.2265
- Issue published online: 15 DEC 2013
- Article first published online: 10 JUL 2012
- Manuscript Accepted: 29 MAY 2012
- Manuscript Revised: 28 MAR 2012
- Manuscript Received: 28 NOV 2011
- reactive sputtering;
- thin film solar cells
Cu2ZnSnS4 (CZTS) is a promising thin-film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two-step process for fabrication of CZTS films, involving reactive sputtering of a Cu-Zn-Sn-S precursor followed by rapid annealing. X-ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high-temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with Jsc and Voc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd.