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Optimization of ultraviolet laser doping for crystalline silicon solar cells with a novel segmented selective emitter design

Authors

  • John S. Renshaw,

    Corresponding author
    1. University Center of Excellence for Photovoltaics, Georgia Institute of Technology, Atlanta, GA 30332, USA
    • Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA
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  • Ajay Upadhyaya,

    1. University Center of Excellence for Photovoltaics, Georgia Institute of Technology, Atlanta, GA 30332, USA
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  • Vijaykumar Upadhyaya,

    1. University Center of Excellence for Photovoltaics, Georgia Institute of Technology, Atlanta, GA 30332, USA
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  • Ian B. Cooper,

    1. University Center of Excellence for Photovoltaics, Georgia Institute of Technology, Atlanta, GA 30332, USA
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  • Ajeet Rohatgi

    1. University Center of Excellence for Photovoltaics, Georgia Institute of Technology, Atlanta, GA 30332, USA
    2. Suniva Inc., Norcross, GA 30092, USA
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Correspondence: John S. Renshaw, Department of Physics, Georgia Institute of Technology, 837 State Street, Atlanta, GA 30332, USA.

E-mail: johnsrenshaw@gmail.com

ABSTRACT

This paper reports on the use of ultraviolet laser for forming segmented selective emitters on POCl 3 n  + –p–p  +  solar cells. Laser scan speed, pulse power, and repetition rate are optimized to minimize laser-induced defects, which are found to enhance recombination and reduce the local open-circuit voltage. Laser-doped selective emitters formed by locally driving in additional phosphorous from the diffusion glass are well suited for an etchback process without the need for a mask. In this paper, we show a novel selective emitter design that is segmented instead of continuous, combined with an emitter etchback process gives an efficiency improvement of about 0.3% absolute over a standard industrial type solar cell and 0.2% absolute improvement over a non-segmented selective emitter solar cell. Copyright © 2012 John Wiley & Sons, Ltd.

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