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Effects of combined heat and light soaking on device performance of Cu(In,Ga)Se2 solar cells with ZnS(O,OH) buffer layer

Authors

  • Taizo Kobayashi,

    Corresponding author
    1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara, Kanagawa, Japan
    • Correspondence: Taizo Kobayashi, Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan.

      E-mail: kobayashi-t@ee.aoyama.ac.jp

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  • Hiroshi Yamaguchi,

    1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara, Kanagawa, Japan
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  • Tokio Nakada

    1. Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara, Kanagawa, Japan
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ABSTRACT

The impacts of air annealing, light soaking (LS), and heat–light soaking (HLS) on cell performances were investigated for ZnS(O,OH)/Cu(In,Ga)Se2 (CIGS) thin-film solar cells. It was found that the HLS post-treatment, a combination of LS and air annealing at 130 °C, is the most effective process for improving the cell performances of ZnS(O,OH)/CIGS devices. The best solar cell yielded a total area efficiency of 18.4% after the HLS post-treatment. X-ray photoelectron spectroscopy showed that the improved cell performance was attributable to the decreased S/(S + O) atomic ratio, not only in the surface region but also the interface region between the ZnS(O,OH) and CIGS layers, implying the shift to an adequate conduction-band offset at the ZnS(O,OH)/CIGS interface. Copyright © 2013 John Wiley & Sons, Ltd.

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