Insulated gate bipolar transistor reliability testing protocol for PV inverter applications
Article first published online: 16 JAN 2013
Published 2013. This article is a U.S. Government work and is in the public domain in the USA.
Progress in Photovoltaics: Research and Applications
Volume 22, Issue 9, pages 970–983, September 2014
How to Cite
2014), Insulated gate bipolar transistor reliability testing protocol for PV inverter applications, Prog. Photovolt: Res. Appl., 22, 970–983, doi: 10.1002/pip.2351, , , , and (
- Issue published online: 15 AUG 2014
- Article first published online: 16 JAN 2013
- Manuscript Accepted: 19 NOV 2012
- Manuscript Revised: 22 OCT 2012
- Manuscript Received: 1 MAY 2012
- power electronics;
To decrease the cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and weaknesses with regards to inverters is necessary. This paper summarizes the current state of experimentation surrounding the use of IGBTs in photovoltaic inverters and discusses their construction, use, lifetime, and reliability of IGBTs regularly used in photovoltaic inverters. Published 2013. This article is a U.S. Government work and is in the public domain in the USA.