High-efficiency µc-Si solar cells made by very high-frequency plasma-enhanced chemical vapor deposition
Article first published online: 30 JAN 2006
Copyright © 2006 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 14, Issue 4, pages 305–311, June 2006
How to Cite
Gordijn, A., Rath, J. K. and Schropp, R. E. I. (2006), High-efficiency µc-Si solar cells made by very high-frequency plasma-enhanced chemical vapor deposition. Prog. Photovolt: Res. Appl., 14: 305–311. doi: 10.1002/pip.673
- Issue published online: 13 MAY 2006
- Article first published online: 30 JAN 2006
- Manuscript Revised: 21 JUL 2005
- Manuscript Received: 27 MAY 2005
- Microcrystalline silicon;
- solar cells;
- high efficiency;
Microcrystalline silicon-based single-junction p–i–n solar cells have been fabricated by very high-frequency plasma enhanced chemical vapor deposition using a showerhead cathode at high pressures and under silane depletion conditions. The i-layers are made near the transition from amorphous to crystalline. It was found that, especially at high crystalline fractions, the open-circuit voltage and fill factor are very sensitive to the morphology of the substrate. At an i-layer deposition rate 0·45 nm/s, we have measured a stabilised efficiency of 10% (Voc = 0·52 V, FF = 0·74) for a cell made on texture-etched ZnO:Al. The performance is stable under light soaking. The defect density of the absorber layer is in the 1015 cm−3 range. In spite of the presence of oxygen contamination, good electrical properties and good infrared cell response are obtained. Copyright © 2006 John Wiley & Sons, Ltd.