This article is a U.S. Government work and is in the public domain in the U.S.A.
Short Communication: Accelerated Publication: Research
19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor†
Article first published online: 14 FEB 2008
This article is a U.S. Government work and is in the public domain in the U.S.A. Published in 2008 by John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 16, Issue 3, pages 235–239, May 2008
How to Cite
Repins, I., Contreras, M. A., Egaas, B., DeHart, C., Scharf, J., Perkins, C. L., To, B. and Noufi, R. (2008), 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor. Prog. Photovolt: Res. Appl., 16: 235–239. doi: 10.1002/pip.822
- Issue published online: 26 MAR 2008
- Article first published online: 14 FEB 2008
- Manuscript Revised: 9 JAN 2008
- Manuscript Received: 20 NOV 2007
- US Department of Energy Photovoltaics program. Grant Number: DE-AC36-99GO10337 to NREL
- thin film solar cells;
- record efficiency;
- fill factor;
- diode quality;
- saturation current;
We report a new record total-area efficiency of 19·9% for CuInGaSe2-based thin-film solar cells. Improved performance is due to higher fill factor. The device was made by three-stage co-evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.