Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices
Article first published online: 23 JUL 2010
Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications
Volume 19, Issue 2, pages 149–154, March 2011
How to Cite
Falcão, V. D., Miranda, D. O., Sabino, M. E. L., Moura, T. D. O., Diniz, A. S. A. C., Cruz, L. R. and Branco, J. R. T. (2011), Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices. Prog. Photovolt: Res. Appl., 19: 149–154. doi: 10.1002/pip.999
- Issue published online: 23 FEB 2011
- Article first published online: 23 JUL 2010
- Manuscript Revised: 5 MAR 2010
- Manuscript Received: 29 OCT 2009
- zinc oxide;
- plasma deposition;
- transparent conductive oxide;
- photovoltaic devices
Undoped zinc oxide thin films were grown at room temperature using two techniques: plasma deposition (PD) and electron beam evaporation in an argon atmosphere. PD offers some advantages, such as low ion damage and low deposition temperature. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV–VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by PD was 3.1 × 10−2 Ω cm, lower than the value of 1.2 × 10−1 Ω cm found for plasma assisted e-beam evaporated films. Copyright © 2010 John Wiley & Sons, Ltd.