Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells (pages 187–191)
M.I. Bertoni, S. Hudelson, B.K. Newman, D.P. Fenning, H.F.W. Dekkers, E. Cornagliotti, A. Zuschlag, G. Micard, G. Hahn, G. Coletti, B. Lai and T. Buonassisi
Article first published online: 24 NOV 2010 | DOI: 10.1002/pip.1008
Studies on a specially prepared mc-Si solar cell indicate that the recombination activity at some grain boundaries reduces significantly upon hydrogen passivation, whereas at other ones do not. Our detailed analytical investigations demonstrate that defect microstructure plays a dominant role in determining passivation efficacy. The density of countable etch pits along a grain boundary is found to be the principal property governing post-passivation recombination activity, while Fe-rich precipitate decoration was found to play a less significant role.