Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells (pages 442–452)
Jeffrey F. Wheeldon, Christopher E. Valdivia, Alexandre W. Walker, Gitanjali Kolhatkar, Abdelatif Jaouad, Artur Turala, Bruno Riel, Denis Masson, Norbert Puetz, Simon Fafard, Richard Arès, Vincent Aimez, Trevor J. Hall and Karin Hinzer
Article first published online: 18 NOV 2010 | DOI: 10.1002/pip.1056
Four tunnel junction designs for multi-junction solar cells under high concentration are studied to determine the peak tunneling current and resistance change as a function of the doping concentration. These four tunnel junctions designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Experimental and numerical methods are used to determine the minimum doping concentration required for each tunnel junction design to operate within a multi-junction solar cell at solar concentrations between 1-to 2000-suns.