New reaction kinetics for a high-rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2-based solar cells (pages 534–542)
Dimitrios Hariskos, Richard Menner, Philip Jackson, Stefan Paetel, Wolfram Witte, Wiltraud Wischmann, Michael Powalla, Linda Bürkert, Torsten Kolb, Mike Oertel, Bernhard Dimmler and Bettina Fuchs
Version of Record online: 31 JAN 2012 | DOI: 10.1002/pip.1244
The paper reports on a new reaction kinetics for the so-called chemical bath deposition of the zinc sulfide oxide Zn(S,O) buffer layer in Cu(In,Ga)Se2 (CIGS)-based solar cells. The new approach allows industrially relevant growth rates. Applying the high-rate Zn(S,O) buffer layer in CIGS/Zn(S,O)/(Zn,Mg)O/ZnO:Al devices, highly efficient small area solar cells up to 19.1% and 60 ×120 cm2 modules up to 13.1% were realized. I-V curve of a champion 60 × 120 cm2 Cu(In,Ga)Se2 module with a high-rate Zn(S,O) buffer (Aperture area efficiency ηap = 13.1%, VOC/cell = 653 mV, FF = 71.0%, jSC = 28.4 mA/cm2, Pmax = 83.7 W, Aperture area Aap = 6374 cm2).