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Synthesis of polyimides containing triphenylamine-substituted triazole moieties for polymer memory applications

Authors

  • Kun-Li Wang,

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    1. Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan
    • Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan
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  • Yi-Liang Liu,

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • I-Hao Shih,

    1. Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 10608, Taiwan
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  • Koon-Gee Neoh,

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • En-Tang Kang

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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Abstract

A series of thermally stable aromatic polyimides containing triphenylamine-substituted triazole moieties (AZTA-PI)s were prepared and characterized. The glass transition temperatures (Tg) of the polyimides were found to be in the range of 262–314 °C. The polyimides obtained by chemical imidization had inherent viscosities of 0.25–0.44 dL g−1 in N-methyl-2-pyrrolidinone. The number average molecular weights (Mn) and weight average molecular weights (Mw) were 1.9–3.2 × 104 and 3.2–5.6 × 104, respectively, and the polydispersity indices (PDI = Mw/Mn) were in the range of 1.70–1.78. A resistive switching device was constructed from the 4,4′-hexafluoroisopropylidenediphthalic dianhydride-based soluble polyimide (AZTA-PIa) in a sandwich structure of indium-tin oxide/polymer/Al. The as-fabricated device can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at a switching threshold voltage of 2.5 V under either positive or negative electrical sweep, with an ON/OFF state current ratio in the order of 105 at −1 V. The device is able to remain in the ON state even after turning off the power or under a reverse bias. The nonvolatile and nonrewritable natures of the ON state indicate that the device is a write-once read-many times (WORM) memory. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010

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