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Push–Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memory

Authors

  • Bin Zhang,

    1. Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
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  • Yu Chen,

    Corresponding author
    1. Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
    2. The State Key Laboratory of ASIC & System, Fudan University, 220 Handan Road, Shanghai 200433, China
    • Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
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  • Gang Liu,

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • Li-Qun Xu,

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • Junneng Chen,

    1. Shanghai Key Laboratory of Functional Materials Chemistry, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China
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  • Chun-Xiang Zhu,

    1. Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • Koon-Gee Neoh,

    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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  • En-Tang Kang

    Corresponding author
    1. Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
    • Department of Chemical and Biomolecular Engineering, National University of Singapore, 10 Kent Ridge, Singapore 119260, Singapore
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Abstract

A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/RGO-PFTPA/Al. The switch-on voltage of the as-fabricated device was around −1.4 V, and the ON/OFF-state current ratio was more than 103. The ON–OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of −1 V for up to 3 h, or under a pulse voltage stress of −1 V for up to 108 continuous read cycles (pulse period = 2 μs, pulse width = 1 μs). © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012

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