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Keywords:

  • electron beam irradiation;
  • molecular glass resist;
  • lithography;
  • photoresist;
  • photo-acid generator

Abstract

A novel photo-acid generator (PAG) bound molecular glass photoresist with a single protecting group has been developed as a promising resist material for use in microelectronics. This single component molecular resist was prepared in four steps starting from 9,9-bis(4-hydroxyphenyl)fluorene. The single component molecular resist exhibited good thermal properties, such as a 10% weight loss temperature of 200 °C and a glass transition temperature of 91 °C. This resist showed a good sensitivity of 60 μC/cm2 with e-beam exposure (50 keV). On the other hand, the fine pattern with a half-pitch of 50 nm in the presence of 4 wt % quencher, trioctylamine, was obtained using electron-beam (100 keV) lithography. The LER value was 8.2 nm (3σ, 60 nm half-pitch patterns). © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013