Chemically amplified photoresists for 193-nm photolithography: Effect of molecular structure and photonic parameters on photopatterning (pages 1271–1277)
Hassan Ridaoui, Ali Dirani, Olivier Soppera, Esma Ismailova, Cyril Brochon, Guy Schlatter, Georges Hadziioannou, Raluca Tiron, Philippe Bandelier and Claire Sourd
Version of Record online: 3 FEB 2010 | DOI: 10.1002/pola.23866
Among other resist platforms, Chemically Amplified Photoresists (CAR) are widely used because of their excellent properties in terms of resolution, sensitivity and etching resistance. CAR with wellcontrolled polymer structures were prepared and investigated. In particular, the impact of the polymer structure on the lithographic performance was evaluated. Linear and branched polymers with various molecular weight and polydispersity were compared. We focused on the dependency of the photosensitivity of the resist with the structural parameters. These results allow further understanding of the fundamental phenomena involved by 193 nm irradiation.