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Formation of long-range stripe patterns with sub-10-nm half-pitch from directed self-assembly of block copolymer

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Abstract

We have demonstrated directed self-assembly of poly(styrene-b-dimethylsiloxiane) (PS-b-PDMS) down to sub-10-nm half-pitch by using grating Si substrate coated with PDMS. The strong segregation between PS and PDMS enables us to direct the self-assembly in wide grooves of the grating substrate up to 500 nm in width. This process can be applied to form various type of sub-10-nm stripe pattern along variety of grating shape. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010

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