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High speeds complementary integrated circuits fabricated with all-printed polymeric semiconductors

Authors

  • Kang-Jun Baeg,

    1. Heeger Center for Advanced Materials, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
    2. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea
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  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Dong-Yu Kim,

    Corresponding author
    1. Heeger Center for Advanced Materials, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
    • Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Soon-Won Jung,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea
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  • Jae Bon Koo,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea
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  • In-Kyu You,

    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea
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  • Henry Yan,

    1. Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077
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  • Antonio Facchetti,

    Corresponding author
    1. Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077
    • Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Yong-Young Noh

    Corresponding author
    1. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea
    2. Department of Chemical Engineering, Hanbat National University, San 16-1, Dukmyung-dong, Yuseong-gu, Daejeon 305-719, Republic of Korea
    • Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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Abstract

Inkjet-printed high speed polymeric complementary circuits are fabricated using an n-type ([poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-dithiophene)} [P(NDI2OD-T2), Polyera ActivInk N2200] and two p-type polymers [poly(3-hexylthiophene) (P3HT) and a dithiophene-based polymer (Polyera ActivInk P2100)]. The top-gate/bottom-contact (TG/BC) organic field-effect transistors (OFETs) exhibit well-balanced and very-high hole and electron mobilities (μFET) of 0.2–0.5 cm2/Vs, which were enabled by optimization of the inkjet-printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2-ethoxyethanol). Our first demonstrated inkjet-printed polymeric complementary devices have been integrated to high-performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ∼50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine-tuning of the device architecture and optimization of the p- and n-channel semiconductor processing. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010

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