Vertical confinement and interface effects on the microstructure and charge transport of P3HT thin films

Authors

  • Leslie H. Jimison,

    1. Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, California 94305
    Current affiliation:
    1. Leslie H. Jimison and Jonathan Rivnay, Department of Bioelectronics, Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 route de Mimet, 13541 Gardanne, France
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    • Leslie H. Jimison and Scott Himmelberger contributed equally to this work.

  • Scott Himmelberger,

    1. Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, California 94305
    Current affiliation:
    1. Leslie H. Jimison and Jonathan Rivnay, Department of Bioelectronics, Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 880 route de Mimet, 13541 Gardanne, France
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    • Leslie H. Jimison and Scott Himmelberger contributed equally to this work.

  • Duc T. Duong,

    1. Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, California 94305
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  • Jonathan Rivnay,

    1. Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, California 94305
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  • Michael F. Toney,

    1. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025
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  • Alberto Salleo

    Corresponding author
    1. Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, California 94305
    • Materials Science and Engineering, 476 Lomita Mall, 239 McCullough Building, Stanford, California 94305
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Abstract

Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of ∼20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices. © 2013 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2013

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