Initiated PECVD of Organosilicon Coatings: A New Strategy to Enhance Monomer Structure Retention

Authors

  • Anna Maria Coclite,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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  • Karen K. Gleason

    Corresponding author
    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
    • Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
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Abstract

A new deposition method, initiated PECVD (iPECVD), is proposed for the formation of organosilicon polymers with enhanced monomer structure retention compared to conventional PECVD. The quasi-selective fragmentation of an initiator is driven by a low power plasma discharge, as opposed to using a hot filament for initiator decomposition as in a standard, plasma-free initiated CVD (iCVD). The weak peroxide bond (O[BOND]O) in the initiator permits the formation of radical species at very low plasma power density (0.07 W · cm−2). Kinetic analysis of the deposition process indicates that the film formation rate follows the Arrhenius law, similarly to other iCVD process from organosilicon monomers.

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