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Keywords:

  • 72.80.Cw;
  • 73.40.Gk;
  • 73.61.Cw;
  • 73.63.Bd;
  • 79.70.+q

Abstract

Local modification at the nanometre scale of the electrical (I–V) and electron field emission (FE) properties of boron-doped hydrogenated diamond are reported. These are achieved by the application of a voltage pulse between the hydrogenated diamond surface and the tip of a scanning tunnelling microscope under UHV conditions. The area affected by the voltage pulse (2–4 nm in diameter) shows a drastic reduction in tunnelling current (by 2 orders of magnitude) and a concomitant decrease in field emission. The tunnelling current and field emission properties gradually recover on a time scale of about 1 hour under UHV conditions. These surface modifications are thought to be due to hydrogen removal that is caused by the voltage pulse. The observed recovery appears to be due to H replenishment which restores the surface conductivity and negative electron affinity of the surface. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)