Original Paper
Nanoscale modification of electrical properties of hydrogenated boron-doped diamond
Article first published online: 19 MAR 2004
DOI: 10.1002/pssa.200306793
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Andrienko, I., Prawer, S. and Kalish, R. (2004), Nanoscale modification of electrical properties of hydrogenated boron-doped diamond. physica status solidi (a), 201: 1537–1542. doi: 10.1002/pssa.200306793
Publication History
- Issue published online: 23 MAR 2004
- Article first published online: 19 MAR 2004
- Manuscript Accepted: 13 FEB 2004
- Manuscript Revised: 6 FEB 2004
- Manuscript Received: 28 NOV 2003
- Abstract
- References
- Cited By
Keywords:
- 72.80.Cw;
- 73.40.Gk;
- 73.61.Cw;
- 73.63.Bd;
- 79.70.+q
Abstract
Local modification at the nanometre scale of the electrical (I–V) and electron field emission (FE) properties of boron-doped hydrogenated diamond are reported. These are achieved by the application of a voltage pulse between the hydrogenated diamond surface and the tip of a scanning tunnelling microscope under UHV conditions. The area affected by the voltage pulse (2–4 nm in diameter) shows a drastic reduction in tunnelling current (by 2 orders of magnitude) and a concomitant decrease in field emission. The tunnelling current and field emission properties gradually recover on a time scale of about 1 hour under UHV conditions. These surface modifications are thought to be due to hydrogen removal that is caused by the voltage pulse. The observed recovery appears to be due to H replenishment which restores the surface conductivity and negative electron affinity of the surface. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

1862-6319/asset/olbannerleft.gif?v=1&s=8a4fd95c0bacbcd176335f2a16b7603729bff53b)
