Original Paper

InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror

  1. J. Dorsaz*,
  2. J.-F. Carlin,
  3. C. M. Zellweger,
  4. S. Gradecak,
  5. M. Ilegems

Article first published online: 10 SEP 2004

DOI: 10.1002/pssa.200405042

Issue

physica status solidi (a)

physica status solidi (a)

Volume 201, Issue 12, pages 2675–2678, September 2004

Additional Information

How to Cite

Dorsaz, J., Carlin, J.-F., Zellweger, C. M., Gradecak, S. and Ilegems, M. (2004), InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror. phys. stat. sol. (a), 201: 2675–2678. doi: 10.1002/pssa.200405042

Author Information

  1. Institute of Quantum Electronics and Photonics, Swiss Federal Institute of Technology/Ecole Polytechnique Fédérale, 1015 Lausanne EPFL, Switzerland

*Phone: +41 21 693 45 30, Fax: +41 21 693 43 43

Publication History

  1. Issue published online: 10 SEP 2004
  2. Article first published online: 10 SEP 2004
  3. Manuscript Accepted: 8 JUL 2004
  4. Manuscript Received: 25 FEB 2004

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (188K)

Keywords:

  • 81.05.Ea;
  • 85.60.Bt;
  • 85.60.Jb

Abstract

We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A1–xInxN layers with an Al content around x ∼ 0.17 are lattice matched to GaN, thus avoiding strain-related issues in the subsequent active layers while keeping a high refractive index contrast of 7%, comparable to that achievable in the Al0.5Ga0.5N/GaN system. Devices exhibit clear resonant-cavity effects, improved directionality in the radiation pattern and achieve an optical output of 1.7 mW and 2.6% external quantum efficiency at 20 mA. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Get PDF (188K)