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Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

  1. L. Niinistö*,
  2. M. Nieminen,
  3. J. Päiväsaari,
  4. J. Niinistö,
  5. M. Putkonen,
  6. M. Nieminen

Article first published online: 7 MAY 2004

DOI: 10.1002/pssa.200406798

Issue

physica status solidi (a)

physica status solidi (a)

Volume 201, Issue 7, pages 1443–1452, May 2004

Additional Information

How to Cite

Niinistö, L., Nieminen, M., Päiväsaari, J., Niinistö, J., Putkonen, M. and Nieminen, M. (2004), Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials. physica status solidi (a), 201: 1443–1452. doi: 10.1002/pssa.200406798

Author Information

  1. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland

*Phone: +358 9 451 2600, Fax: +358 9 462 373, Based on invited lecture presented at E-MRS 2003

Publication History

  1. Issue published online: 7 MAY 2004
  2. Article first published online: 7 MAY 2004
  3. Manuscript Accepted: 25 FEB 2004
  4. Manuscript Received: 10 FEB 2004

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Keywords:

  • 77.55.+f;
  • 81.15.Hi

Abstract

The principle and practice of Atomic Layer Deposition (ALD) are described with special emphasis on the advantages of the method for processing of thin films for advanced applications in electronics, catalysis and sensor technology. The examples of ALD-processed materials include ZrO2 and other high-k dielectrics especially the rare earth oxides, SnO2 for gas sensors and ZnO for optoelectronics. The various precursor chemistries leading to these materials are discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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