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Original Paper
Electrochemical Etching and CV-Profiling of GaN
Article first published online: 7 JUN 2004
DOI: 10.1002/pssa.200406829
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Wolff, T., Rapp, M. and Rotter, T. (2004), Electrochemical Etching and CV-Profiling of GaN. physica status solidi (a), 201: 2067–2075. doi: 10.1002/pssa.200406829
Publication History
- Issue published online: 11 JUN 2004
- Article first published online: 7 JUN 2004
- Manuscript Accepted: 3 MAY 2004
- Manuscript Revised: 27 APR 2004
- Manuscript Received: 13 FEB 2004
- Abstract
- References
- Cited By
Keywords:
- 73.40.Mr;
- 81.05.Ea;
- 81.70.Jb;
- 82.47.Wx;
- 82.50.Hp;
- 82.80.Fk
Abstract
We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al, In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring. In reverse bias with common CV technique the concentration of donors and acceptors can be evaluated. Using a newly developed etch procedure, which we call “cyclic oxidation”, n- and p-type nitrides can be etched (photo-)electrochemically (PEC) to yield reproducibly etched surfaces with mirror-like surface morphology at high etch rates (∼3 μm/h). This new etch procedure is explained in detail. The influence of the process parameters on the etch rate is discussed. Using this new etch procedure, various MOVPE and HVPE grown samples have been characterized by CV-Profiling. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)