Characterization of a new transparent-conducting material of ZnO doped ITO thin films



Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (Eo), the dispersion energy (Ed), the long wavelength refractive index (n), average oscillator wave length (λo) and oscillator strength So for the thin films were determined and presented in this work. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)