Self-assembly of GaAs holed nanostructures by droplet epitaxy

Authors


Abstract

The cover picture refers to the Rapid Research Letter by Zhiming M. Wang et al. [1] and displays the nanostructure evolution during GaAs growth by droplet epitaxy. The two colored AFM images of 2 µm × 2 µm show the formation of GaAs nano-crystals shaped like lighted candles and square-holed round coins.

The first author, Zhiming M. Wang, is a research professor at the University of Arkansas, USA, and a member of the Molecular-Beam Epitaxial group of Distinguished Professor Gregory J. Salamo. His current research interests include low-dimensional semiconductor nanostructures, ferroelectronic and ferromagnetic nanostructures, and manipulation of single molecules.

This issue of physica status solidi (a) also contains contributions from the 4th International Conference “Porous Semiconductors – Science and Technology”, held 14–19 March 2004 in Cullera (Valencia), Spain. Further papers from PSST-2004 are published in phys. stat. sol. (c) 2, No. 9 (2005).

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