Original Paper

Optical constants and critical-point parameters of GaAs1–xSbx alloy films grown on GaAs

  1. N. Ben Sedrine1,*,
  2. T. Gharbi2,
  3. J. C. Harmand3,
  4. R. Chtourou1,†

Article first published online: 18 MAR 2008

DOI: 10.1002/pssa.200777746

Issue

physica status solidi (a)

physica status solidi (a)

Volume 205, Issue 4, pages 833–836, April 2008

Additional Information

How to Cite

Ben Sedrine, N., Gharbi, T., Harmand, J. C. and Chtourou, R. (2008), Optical constants and critical-point parameters of GaAs1–xSbx alloy films grown on GaAs. Phys. Status Solidi A, 205: 833–836. doi: 10.1002/pssa.200777746

Author Information

  1. 1

    Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche et de Technologie de l'Energie, BP. 95, Hammam-Lif 2050, Tunisia

  2. 2

    FEMTO-ST, Université de Franche-Comté, 18 Rue Alain Savary, 25000 Besançon, France

  3. 3

    Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 460, Marcoussis, France

  1. †

    Phone: +216 98 221 242, Fax: +216 71 430 934

*Phone: + 216 22 516 257, Fax: +216 71 430 934

  1. †

    Phone: +216 98 221 242, Fax: +216 71 430 934

Publication History

  1. Issue published online: 4 APR 2008
  2. Article first published online: 18 MAR 2008
  3. Manuscript Accepted: 2 DEC 2007
  4. Manuscript Revised: 30 NOV 2007
  5. Manuscript Received: 6 JUN 2007

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Keywords:

  • 78.20.Ci;
  • 78.66.Fd;
  • 81.15.Hi

Abstract

Spectroscopic Ellipsometry (SE) is used in this work to investigate the optical properties of the GaAs1–xSbx alloys. The present study is based on a set of GaAs1–xSbx layers (x = 0.0%, 6.7% and 10.8%) grown on GaAs substrate by molecular beam epitaxy (MBE). The SE measurements were carried out in the energy range of 1.4 – 5.5 eV at room temperature for 70° and 75° incident angles, before and after chemical etching. The optical constants of GaAs1–xSbx alloys were extracted using the Newton–Raphson method based on the four-phase model (ambient – GaAs native oxide overlayer – GaAs1–xSbx film – GaAs substrate). Analytic line shapes fitted to numerically calculated second derivatives of the dielectric functions determined the critical-points parameters above the GaAs1–xSbx bandgap E0. The best fit parameters and the experimental extracted data show in particular a red-shift and a broadening increase of E1, E1 + Δ1, E ′0 and E2 transitions by increasing Sb content. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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