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Original Paper
Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy
Article first published online: 18 APR 2008
DOI: 10.1002/pssa.200778745
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Simon, J. and Jena, D. (2008), Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy. Phys. Status Solidi A, 205: 1074–1077. doi: 10.1002/pssa.200778745
Publication History
- Issue published online: 14 MAY 2008
- Article first published online: 18 APR 2008
- Manuscript Accepted: 14 FEB 2008
- Manuscript Revised: 13 FEB 2008
- Manuscript Received: 6 OCT 2007
Funded by
- Office of Naval Research (Dr. C. Wood)
- University of Notre Dame research funds
- Abstract
- References
- Cited By
Keywords:
- 68.55.−J;
- 68.55.Ln;
- 73.61.Ey;
- 81.05.Ea;
- 81.15.Hi
Abstract
The performance of III–V nitride heterostructure bipolar transistors has been limited by highly resistive p-type layers, in addition to difficulties associated with a precise p–n junction placement at the emitter-base heterojunction due to the Mg-memory effect during growth by Metal-Organic Chemical Vapor Deposition. The problem of precise p–n heterojunction placement can be solved by Molecular Beam Epitaxy growth. To investigate this possibility, in this work, we present a comprehensive study of the effect of III/V ratio, growth temperature, and Mg doping on the resistivity of Mg doped GaN layers grown by Molecular Beam Epitaxy. N2-rich growth conditions are found to lead to a temperature- independent low hole mobility, as opposed to Ga-rich growth conditions that lead to higher hole mobilities that vary with temperature. In addition, the growth temperature, Ga flux, and Mg flux windows leading to the highest p-type conductivity are identified. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)