The effect of growth temperature on physical properties of heavily doped ZnO:Al films

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Abstract

Heavily-doped ZnO:Al films have been deposited on high temperature stable glass substrates using radio-frequency (RF) magnetron sputtering. The effect of growth temperature on physical properties of the films has been investigated. The microstructure evolved a columnar structure into a granular one with the increase in growth temperature and then a typical honeycomb-type microstructure representing huge grain formation indicating high densification. All Al-doped ZnO films exhibited high optical transparency and the absorption edge shifted to the short wavelength (blue-shift) as the growth temperature increased. The dense microstructure with a high crystallographic quality and large grains evolved at 500 °C enabled us to obtain 2.28 × 10–3 Ω cm and high visible transmittance over 90% even if the ZnO film was doped with an Al content of approximately 5.5 at%. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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