Green light-emitting diodes with p-InGaN:Mg grown on c -plane sapphire and GaN substrates
Version of Record online: 26 FEB 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 4, pages 750–753, April 2009
How to Cite
Liu, J. P., Limb, J., Lochner, Z., Yoo, D., Ryou, J.-H. and Dupuis, R. D. (2009), Green light-emitting diodes with p-InGaN:Mg grown on c -plane sapphire and GaN substrates. Phys. Status Solidi A, 206: 750–753. doi: 10.1002/pssa.200824366
- Issue online: 3 APR 2009
- Version of Record online: 26 FEB 2009
- Manuscript Accepted: 3 JAN 2009
- Manuscript Received: 4 SEP 2008
- US Department of Energy. Grant Number: DE-FC26-03NT41946
- SAFC Hitech Inc.
- Steve W. Chaddick Endowed Chair in Electro-Optics
- Georgia Research Alliance
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