Growth and electrical properties of ZnO films prepared by chemical bath deposition method

Authors

  • Dewei Chu,

    Corresponding author
    1. National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
    • Phone: +81 52-736-7238, Fax: +81 52-736-7234
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  • Takahiro Hamada,

    1. Nanotechnology Research Laboratory, Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
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  • Kazumi Kato,

    1. National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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  • Yoshitake Masuda

    1. National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
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Abstract

The influence of the choice of temperature, pH value, counter-ion, deposition time, and seed layer on the morphology as well as electrical properties of ZnO films grown from chemical bath deposition (CBD) are discussed. Consequently, oriented ZnO films with various microstructures can be synthesized by controlling the solution pH value and counter-ions. Besides, the point at which the seed layer is pre-heated at higher temperature is crucial and can lead to a significant difference in the width of crystals and electrical properties of ZnO films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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