Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs
Version of Record online: 23 MAR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 6, pages 1194–1198, June 2009
How to Cite
Fündling, S., Li, S., Sökmen, Ü., Merzsch, S., Hinze, P., Weimann, T., Jahn, U., Trampert, A., Riechert, H., Peiner, E., Wehmann, H.-H. and Waag, A. (2009), Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs. Phys. Status Solidi A, 206: 1194–1198. doi: 10.1002/pssa.200880841
- Issue online: 3 JUN 2009
- Version of Record online: 23 MAR 2009
- Manuscript Accepted: 7 JAN 2009
- Manuscript Revised: 3 DEC 2008
- Manuscript Received: 10 SEP 2008
- Deutsche Forschungsgemeinschaft (DFG). Grant Number: SPP1165 project (IHT)
- Joint Optical Metrology Centre Braunschweig (JOMC)
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