Growth of m -GaN layers by epitaxial lateral overgrowth from sapphire sidewalls
Version of Record online: 23 MAR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 6, pages 1164–1167, June 2009
How to Cite
Okada, N., Kawashima, Y. and Tadatomo, K. (2009), Growth of m -GaN layers by epitaxial lateral overgrowth from sapphire sidewalls. Phys. Status Solidi A, 206: 1164–1167. doi: 10.1002/pssa.200880930
- Issue online: 3 JUN 2009
- Version of Record online: 23 MAR 2009
- Manuscript Accepted: 6 JAN 2009
- Manuscript Revised: 12 NOV 2008
- Manuscript Received: 19 SEP 2008
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