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Electronic structure of hydrogenated amorphous Si1–xNx thin films using soft X-ray emission and absorption measurements
Version of Record online: 21 APR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 5, pages 935–939, May 2009
How to Cite
Boyko, T., Kasap, S., Johanson, R., Kobayashi, S., Aoki, T. and Moewes, A. (2009), Electronic structure of hydrogenated amorphous Si1–xNx thin films using soft X-ray emission and absorption measurements. Phys. Status Solidi A, 206: 935–939. doi: 10.1002/pssa.200881277
- Issue online: 5 MAY 2009
- Version of Record online: 21 APR 2009
- Manuscript Revised: 12 NOV 2008
- Manuscript Accepted: 12 NOV 2008
- Manuscript Received: 16 SEP 2008
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Canada Research Chair program
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