Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes
Article first published online: 21 APR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 5, pages 944–947, May 2009
How to Cite
Kashiwaba, Y., Abe, T., Nakagawa, A., Endo, H., Niikura, I. and Kashiwaba, Y. (2009), Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes. Phys. Status Solidi A, 206: 944–947. doi: 10.1002/pssa.200881305
- Issue published online: 5 MAY 2009
- Article first published online: 21 APR 2009
- Manuscript Revised: 25 NOV 2008
- Manuscript Accepted: 25 NOV 2008
- Manuscript Received: 3 AUG 2008
- Japan Science and Technology Agency Innovation Satellite Iwate
- Iwate Prefecture in Japan
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