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Keywords:

  • 61.43.Dq;
  • 61.82.Fk;
  • 71.23.Cq;
  • 71.55.Jv;
  • 76.30.−v;
  • 78.55.Qr

Abstract

Recombination processes of electrons and holes in hydrogenated amorphous silison (a-Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light-induced electron spin resonance (LESR) are compared, and it is concluded that radiative centres responsible for the long decay component of PL are not LESR centres that are nonradiative centres. This is consistent with our model. The mechanism of light-induced defect creation in a-Si:H and its kinetics is summarized in terms of our model. The related defects involved in the recombination processes and the light-induced defect creation in a-Si:H are discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)