Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP
Version of Record online: 25 MAR 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 5, pages 786–790, May 2009
How to Cite
Chouaib, H., Bru-Chevallier, C., Apostoluk, A., Rudno-Rudzinski, W., Pelouard, J.-L., Lijadi, M. and Bove, P. (2009), Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP. Phys. Status Solidi A, 206: 786–790. doi: 10.1002/pssa.200881402
- Issue online: 5 MAY 2009
- Version of Record online: 25 MAR 2009
- Manuscript Accepted: 3 JAN 2009
- Manuscript Revised: 16 DEC 2008
- Manuscript Received: 11 SEP 2008
- French National Research Agency (ANR), project ATTHENA
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