• 71.70.Fk;
  • 78.20.Ci;
  • 78.30.Am;
  • 78.40.Fy


The optical modulation technique of photoreflectance (PR) is applied on tensely-strained silicon on insulator (sSOI) substrates in order to determine the deformation potential in the strained silicon direct band gap. Raman spectroscopy is used for strain determination. A redshift of the Si direct band gap transition is observed as the strain induced in the layer is increased. We report a band gap shrinkage at Γ-point down to 60 ± 6 meV, 120 ± 15 meV and 127 ± 13 meV for 0.77 ± 0.02%, 1.22 ± 0.02% and 1.40 ± 0.03% of strain, respectively. The obtained deformation potential in the direct band gap (a = –0.55 eV and b = –2.45 eV) are in good agreement with previously reported results for bulk material. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)