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Keywords:

  • 73.61.Ey;
  • 78.40.Fy;
  • 78.55.Cr;
  • 78.67.Pt;
  • 85.60.Gz

Abstract

In this paper we present electro-reflectance measurements on 10 nm GaN and 3 nm In0.1Ga0.9N quantum wells. In electro-reflectance spectrum line from QW, and its evolution with bias is observed. It was possible to reduce to zero internal electric field in quantum well and Stark shift of about 25 meV for 220 kV/cm electric field was measured. The inversion of phase and vanishing to zero of the amplitude of electro-reflectance signal was observed during the change of direction of electric field in the quantum well. The analysis of Franz–Keldysh oscillations from barriers allowed to discuss the influence of the electric field to the properties of the quantum well. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)