Original Paper

Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

  1. Victor H. Méndez-García,
  2. I. Martínez-Velis2,
  3. J. S. Rojas-Ramirez2,
  4. R. Contreras-Guerrero2,
  5. M. Ramírez-Lopez2,
  6. J. Hernandez-Rosas2,
  7. G. Garcia-Liñan1,
  8. A. Yu. Gorbatchev1,
  9. L. Zamora-Peredo3,
  10. M. López-López4

Article first published online: 30 MAR 2009

DOI: 10.1002/pssa.200881412

Issue

physica status solidi (a)

physica status solidi (a)

Volume 206, Issue 5, pages 836–841, May 2009

Additional Information

How to Cite

Méndez-García, V. H., Martínez-Velis, I., Rojas-Ramirez, J. S., Contreras-Guerrero, R., Ramírez-Lopez, M., Hernandez-Rosas, J., Garcia-Liñan, G., Gorbatchev, A. Yu., Zamora-Peredo, L. and López-López, M. (2009), Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates. Phys. Status Solidi A, 206: 836–841. doi: 10.1002/pssa.200881412

Author Information

  1. 1

    Optical Communications Research Institute (IICO), Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, San Luis Potosí, S.L.P. 78210, México

  2. 2

    Physics Department, Centro de Investigación y de Estudios Avanzados del IPN, Apartado Postal 14-740, México D.F., 07000, México

  3. 3

    Universidad Politécnica de San Luis Potosí, Iturbide 140, Centro Histórico, San Luis Potosí, S.L.P. 78000, México

  4. 4

    Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Apartado Postal 1-1010, Querétaro 76000, México (on sabbatical leave from Physics Department, Centro de Investigación y Estudios Avanzados del IPN)

Publication History

  1. Issue published online: 5 MAY 2009
  2. Article first published online: 30 MAR 2009
  3. Manuscript Accepted: 16 FEB 2009
  4. Manuscript Revised: 13 FEB 2009
  5. Manuscript Received: 3 JUL 2008

Funded by

  • CONACYT-Mexico
  • ICTDF

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Keywords:

  • 61.46.−w;
  • 78.55.Cn;
  • 78.67.−m;
  • 81.16.Dn;
  • 81.15.Hi

Abstract

The molecular beam epitaxial (MBE) growth of InAs nanostructures on GaAs(631)-oriented substrates is studied by photoluminescence (PL) and photoreflectance spectroscopy (PR). First, a corrugated surface conformed by regularly spaced grooves aligned along the [equation image93] azimuth was formed by the GaAs homoepitaxial growth on the (631) substrate. On this template, we proceeded with the deposition of InAs at several thicknesses in the range of 1 to 4.5 monolayers (MLs). An atomic force microscopy (AFM) analysis of samples without GaAs capping, revealed that assemblage of QDs occurs only after the deposition of the equivalent to ∼1.9 ML of InAs. On these samples, we observed changes on the PR line-shape in the near-bandgap GaAs region linked to the quantity of InAs deposited. The intensity of the built in electric fields was correlated with the strain state at the heterointerface, as a consequence of the self induced piezoelectric effect, typical from high index surfaces. On the other hand, when the samples were capped with a 100 Å thick GaAs layer, strong emission of the nanostructures occurs even for deposited quantities of InAs as low as 1 ML. Since for this InAs thickness the self-assemblage of QDs is not observed, the optical transitions observed were associated with the optical emission of self assembled semiconductor quantum wires, promoted by surface diffusion anisotropy, characteristic of the (631) plane. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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