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Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

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Abstract

Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum-well (QW) light-emitting diodes are investigated using the multiband effective-mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure requires a slightly larger In composition than the conventional QW structure to obtain a given wavelength. The spontaneous emission is found to be improved with the inclusion of the staggered layer for QW structures with a relatively thick well width and the longer wavelength (λ = 530 nm). On the other hand, in the case of QW structures with a relatively thin well width (Lw = 2 nm), the spontaneous emission peak is almost unaffected by a staggered layer.

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